The procedure of deriving the homogeneous bakeable cap layers with the heightened voltages of a disruption is offered on the basis of the analysis of processes of forming the anode oxide films on antimonide of indium. In the tendered procedure the anodizing was carried on in the galvanic-static  mode with programmed change of a anode current. The solution пе pesulphate of ammonium was utillized for an experiment. The matching of photoelectric parameters of capsules of planar photodiodes manufactured with application of the offered procedure and similar base process has shown prospects of application of this procedure for pinch of a thermostability of the InSb photodiodes. Such photodiodes are suitable for application in the low-phon systems.