FEATURES OF CARRENT  TRANSPORT IN REAL SCHOTTKY DIODES

R.K. Mamedov

Baku State University, Baku, Azerbaijan Republic

Is obtained, that the general contact surface Cr-nSi RSD consists of two areas (peripheral with width some micrometers and concerning internal) on which  a potential barrier height differs about 40 meV for a forward and first reverse branches of current-voltage characteristic. Are determined  the  potential barrier height, factor no ideality, contact resistance, area and width of a peripheral contact surface, contribution of a peripheral current to a current of a general contact for the forward branch of current-voltage characteristic, first and  second sites of the reverse branch of current-voltage characteristic RSD.

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