Applied physics
N 2, 2003

Multicolor infrared lateral photoconductivity of InGaAs quantum dots

V. I. Shashkin, A. V. Antonov, V. M. Daniltsev, M. N. Drozdov, Yu. N. Drozdov, D. M. Gaponova,
A. Yu. Lukyanov, L. D. Moldavskaya, A. V. Murel, O. I. Khrykin, A. N. Yablonsky
Institute for Physics of Microstructures, Russian Acadeny of Sciences, Nizhny Novgorod, Russia

V. S. Tulovichikov
NNSU, Nizhny Novgorod, Russia

   Self-assembled InGaAs/GaAs quantum dots multilayer structures were grown by low-pressure metalorganic chemical vapor deposition for investigation of infrared photoconductivity (PC). Normal incidence lateral photoconductivity was observed in the temperature range from 4.2 K to 120 K. At low temperatures the PC peak near 16 mm was dominated, at higher temperatures the only peak near 5 mm was observed. The detector responsivity was increased by one hundred times with decreasing chopper IR radiation frequency from 1 kHz to 10 Hz.

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