Applied physics
N 2, 2003

Matrix MOS-multiplexers of various formats for "staring" photodetective devices

V. M. Akimov, K. O. Boltar, Ye. A. Klimanov, V. P. Lisakin, A. P. Mikertumyants,
L. D. Saginov, A. A. Timofeev, V. M. Ungerman
ORION Research-and-Production Association, Moscow, Russia

   Development results of cooled silicon 64x64, 128x128, 384x288 MOS-multiplexers for "staring" matrix photodetective assemblies (MPDA) based on CdxHg1-хTe and InSb photodiodes (PD) are given. Main electric and design parameters of developed devices are given.

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