Applied physics
N 2, 2003

Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers

I. B. Chistokhin, I. P. Michailovsky, B. I. Fomin, E. I. Cherepov
Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia

   Polycrystalline layers of Si1-xGex, of varying germanium fraction, in situ doped with boron, were received by molecular-beam deposition on layers of the silicon oxide and silicon nitride at temperatures < 500 °C. The structural properties of the films were studied, the dependences of the resistivity on the temperature and the low-frequency noise were measured. It has been demonstrated that, the temperature coefficient of resistance in poly SiGe deposited on different dielectric coverings amounts to (3—4) % and depends on resistance and grain size.

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