Applied physics
N 3, 2003

Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasma

V. J. Kavych, M. I. Lozynska, L. G. Mansurov
Ivan Franko National University of Lviv, Lviv, Ukraine

   We have demonstrated the feasibility of growing the MCMT single crystal layers (Eg = 0,14–0,17 eV) on CdTe (110) substrates by reactive deposition in RF mercury glow discharge. The specific values of the Ts at the range from 220 to 250 °C lead to epitaxial growth of the MCMT layers. After two-stage treatment in Hg overpressure the MCMT layeers have the anomalous high values of the hole mobility (up to 1500 cm/VЧs).

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