Applied physics
N 3, 2003

"Mixed" concept of creation of readout circuits for focal processors with TDI and deselection

Yu. P. Derkach, V. P. Reva
Scientific and Research Institute of Microdevices, Kiev, Ukraine

F. F. Sizov
Institute of Semiconductor Physics of the Ukrainian Academy of Sciences, Kiev, Ukraine

   It is considered the possibility to use the "mixed" technology (the n-channel charge-coupled devices (CCD) technology and the complementary metal-oxide semiconductor (CMOS) technology) for designing and manufacturing of the read-out devices to be used for information readout from multielement infrared (IR) 288x4 diode matrices with time delay and integration function. It is shown that in this case the much more "soft" design rules can be used. The read-out structure chart and some of its parts description are presented. The calculated parameters of the designed read-out circuit for IR multi-row linear photodiode arrays are listed.

Contents