Applied physics
N 3, 2003

Temperatures dependence of current transport in Schottky diodes at the absence of edges effects

R. K. Mamedov
Baku State University, Baku, Azerbaijan Republic

   Temperatures dependence of current transport in Ni-nSi Schottky diodes with different diameters (10—1000 mkm) at the absence of edges effects in the temperatures interval 222—387 K Study has shown that satisfactory type an current-voltage characteristic of Schottky diodes is saved in limited temperatures intervals. The particularities of temperatures depen- dence of barrier height, non-ideality factor, contact resistance, non-dimensional factor and other parameters of Schottky diodes depends on the chosen temperatures intervals.

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