Transients in phototargets of vidicons on basis of MIS structures, sensing to MWIR radiation
A. V. Boroshnev, N. F. Kovtonyuk
COMET Central Research Institute, Moscow, Russia
Kinetics of electronic processes in MIS structures from narrow-bandgap semiconductors, which are used as phototargets of MWIR vidicons, is analysed. Opportunity of regulation of an operation temperature of an IR phototarget at the expense of making in it a nonequilibrium depletion-mode region is considers.
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