APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 6 Founded in 1994 Moscow 2003


Examination of MBE MCT layers by the method of the scanning laser microscopy

P. Yu. Pak, V. A. Fateev, V. V. Shashkin
Institute for Physics of Semiconductors, Novosibirsk, Russia

   The method of the scanning laser microscopy (SLM) was applied for examination of a spatial distribution of the electrically active areas in the MBE MCT layers with compositions of x = 0.22 and x = 0.3, and also in arrays of MCT planar photodiodes. The correlation between results of SLM examination of a piece of an planar photodiodes array and their volt-ampere characteristics is detected. Character of allocation of electrical inhomogeneities in a volume of an MCT epifilm is investigated with the help of a level-by-level release. Comparison of the SLM image of a MBE MCT piece with lateral views of a spatial distribution of concentration of background impurities (C, Cu, As, Li), obtained with the help of a procedure of a secondary ionic mass spectroscopy (SIMS), allows to speak about a correlation of attitude of electrical inhomogeneities with a spatial distribution of background impurities.

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