APPLIED PHYSICS

Photocapacitance effect in narrow band gap PbSnTe

A. E. Klimov, V. N. Shumsky
Institute of Semiconductor Physics, Novosibirsk, Russia

   Low frequency permittivity of PbSnTe solid solution was investigated in dark-ness and under illumination. e = 2000—300 000 was found depending on temperature and illumination. For the first time the increase of e under illumination by about two orders was observed at LH temperature. Far IR cut off of the effect was estimated. It was found that the best correlation of calculations with experimental data took place if we supposed the presence of narrow band of PbSnTe sensitivity within 300—400 mm spectral region.

Contents