APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 5 Founded in 1994 Moscow 2004


To the question on the mechanism of influence of doping by the rare earth elements on the photoluminescence of A3B6 compounds monocrystals of layered structure

E. M. Kerimova, S. N. Mustafaeva, S. I. Mekhtieva
Institute of Physics National Academy of Sciences, Baku, Republic of Azerbaijan

   The influence of doping by the rare-earth elements (Gd, Ho, Dy) on the photoluminescence (PL) of the monocrystals of Indium and Gallium selenides have been investigated. It is established, that under the considered conditions (T = 77—300 K) doping by rare-earth elements with NREE = 10-5—10-1 at. % essentially changes the characteristics and parameters of the photoluminescence of the specified crystals. However, these changes almost are not connected with a material of an entered REE impurity, and are caused only by changes of the properties of the semiconductor. It is assumed, that depending on NREE varies both interlayer bonds and the degree of the structural and spatial defects in the investigated samples.

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