Influence of the ionizing irradiation on photoelectric properties of GaSxSe1-x solid solutions
K. A. Askerov, F. I. Ismaylov
Institute of Photoelectronics of the Azerbaijan National Academy of Sciences,
Baku, Republic of Azerbaijan
The influence of the ionizing irradiation of a various kind on photoelectric properties of the GaSxSe1-x (0 ≤ х ≤0,25) has been investigated. It is established that the change of physical properties of researched samples as a result of the influence of the ionizing irradiation is convertible process connected, basically, with effects of ionization and surface effects. It is shown, that these materials can be used as a sensitive element for manufacturing gauges of the ionizing irradiation.
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