APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 5 Founded in 1994 Moscow 2004


Theory of new type d-doped IR photodiode

A. Yu. Selyakov
ORION Research-and-Production Association, Moscow, Russia

   New d-doped p-n-junction structure was proposed. Diffusion and generation dark currents as well as dark current, caused by recombination in metal—semiconductor contact can be suppressed in the d-doped p-n-junction. A theory of the photodiode was developed. Optimal parameters of each element of the d-doped p-n-junction structure was determined. It is shown, that differential resistance of the d-doped p-n-junction greatly exceed differential resistance of usual p-n-junction on the base of the same semiconductor.

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