No. 5 | Founded in 1994 | Moscow 2004 |
Temperature of BLIP-mode of new type d-doped IR-photodiode
A. Yu. Selyakov
ORION Research-and-Production Association, Moscow, Russia
Detectivity of new type d-doped IR-photodiode was calculated. It is shown that temperature of BLIP-mode of the photodiode fundamentally larger than those of usual photodiode on the base of p-n-junction from the same semiconductor. Temperature of BLIP-mode of the photodiode on the base of InSb is equal 160 K, at T = 200 K it’s detectivity is equal D* = 3·10 W-1 cmHz1/2, the temperature of BLIP-mode of the photodiode on the base of InAs is equal 195 K, and the temperature of BLIP-mode of the photodiode on the base of InAs0,88Sb0,12 is equal 175 K.