PRIKLADNAYA FIZIKA
(Applied Physics)

The Scientific and Technical Journal


2016, No. 2 Founded in 1994. Moscow


Investigation and calculation of the absorption spectra
in epitaxial InGaAs structures

N. I. Iakovleva1 and A. V. Nikonov1,2

Orion R&P Association, Inc.
9 Kosinskaya str., Moscow, 111538, Russia
E-mail: orion@orion-ir.ru

2 Moscow Institute of Physics and Technology
9 Institute al., Dolgoprudny, Moscow Region, 141700, Russia

Received March 15, 2016

The absorption spectra of InGaAs structures grown by metal organic vapor deposition have been investigated on the basis of the fundamental absorption edge caused by transitions of electrons from the valence band to the conduction band. The value of an energy gap width has been calculated using the measured absorption spectrum.

PACS: 42.79.Pw, 85.60.Gz, 07.57.Kp, 85.60.Dw

Keywords: InGaAs, MOCVD, dielectric constant, epitaxy, absorption coefficient, Brillouin zone, calculation, experimental data.

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