APPLIED PHYSICS
THE SCIENTIFIC AND TECHNICAL JOURNAL
No. 2 |
Founded in 1994 |
Moscow 1995 |
SEMICONDUCTOR DIODE LASERS
I. S. Baikov
The All-Russia Research Institute of Interbranch Information, Moscow, Russia
V. V. Bezotosny
P. N. Lebedev Institute of Physics, RAS, Moscow, Russia
The review contains brief information about the main scientific and industrial centers in Russia, engaged in the
development and production of semiconductor injection lasers. Modern directions of fundamental and applied works
are submitted, including the injection lasers on the base of quantum wells, nanostructues and stressed geterolayers.
Series of publications, directed on the development of injection lasers in new spectral regions, high-power
single-mode operation, ultrashort laser pulses generation and high-power laser arrays for solid-state active
material pumping are examined. Associated reference information on the nomenclature of industrial-type
injection lasers, light-emitting modules for fiber-optic communications and high-power light emitting diodes
is presented.
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