ANALYSIS OF HIGH-VOLTAGE ELECTRON MICROSCOPE СВЭМ-1 POSSIBILITY FOR THE MATERIAL

ANALYSIS OF HIGH-VOLTAGE ELECTRON MICROSCOPE СВЭМ-1 POSSIBILITY FOR THE MATERIAL

RADIATION STABILITY STUDY
A. M. Filachev

State Scientific Center "Orion", Moscow, Russia

B. N. Vasichev

Moscow Institute for Electronics and Mathematics (Technical University), Moscow, Russia

I. S. Makarowa, L. B. Rozenfeld, E. E. Chernova-Stoljarova

Research Institute for Electron and ion Optics, Russia

Possibility of using СВЭМ-1 for a inserting of radiation defects in investigating materials was considered. Parameters of illuminating system СВЭМ-1 (accelerating voltage Ј 2 МэВ) was calculated. Considered two variants of influence on the object: irradiation by the focused electron beam or irradiation by x-ray radiation, agitated by this electron beam. Shown that in СВЭМ-1 possible get density of power of dose to 2,5Ч 10⁷ Gr/mm²Ч s. Herewith specific density of power of x-ray radiating, created by the electron beam, can reach 3,3Ч 10⁶ W/mm2.