History, modern state and perspectives of development of semiconductor matrix IR-photo-diode structures and technologies

History, modern state and perspectives of development of semiconductor matrix IR-photo-diode structures and technologies

Akimov V.M., Klimanov Y.A., Liseykin V.P., Timofeev A.A., Shchukin S.V., Jungerman V.M.

State Unitary Enterprise “RD&P Center “ORION”, Moscow, Russia.

Information about the initial stage of development of multi-element semiconductor photo-diode structures referring to the invention of a position-sensitive photo-diode in Russia with a transversal photo-effect (quadrant) is given. Communicates about the invention in Russia TDI circuit on MOS multiplexes. Data on development of matrix IR-photo-diode structures since 1975 to 1995 both abroad and in “RD&P Center "Orion" are presented. Prospects of works carried out on IR-photo-diode arrays are given.