The State Unitary Enterprise "RD&P Center "Orion", Moscow, Russia

The effects of vacuum furnace annealing (400—750 °C) of the conductivity of structures Ni film-polySi layer has been investigated. Ni films (500, 1000, and 1200 ) were deposited by magnetron sputtering. The possibility to realize silicide conductivity layers with sheet resistance about 1 Om/s and from “meanders” with the wide of lines about 4 mm by methods of chemical, plasmochemical and ion beam etching has been shown.