During the late ten years the works have been conducted in Electron NRI on the development of high sensitive TV imaging devices, based on thinned CCDs. At first stage the device with S20 photocathode, magnetically focused transfer section, MCP, electron image proximity transfer section and a thinned CCD, was developed. For intensified CCD a proximity Image Intensifiers with S20 and GaAs photocathodes were developed. At present the device of diode type with NEA GaAs photocathode and a thinned CCD is under development. The paper presents the main photoelectrical parameters of all mentioned devices.