Films of PbBi_1-xSn_xSe (x = 0,03 - 0,7) doped by In atoms have been grown on the substrated of BaF₂ (111, 100) by a molecular beam condensation method. Peculiarities of growth and their electrophysical properties have been investigated. The data on structure of films were obtained by electronographic, X-ray diffractometric and electron—microscopic methods. Epitaxial films by the thickness about 1–1,5 m m were obtained at the substrate temperature equal (400–450) ± 0,5 ⁰C. The magnitudes of half-width of swinging curve of the X-ray diffraction changed within limits of W_1/2 = 100–200 . The concentration and mobility of the charge carriers were n = (2–5) 10¹⁶ cm^-3 and m = (2–3) 10⁴ cm²/V s, accordingly. Films had a mirror-smooth surface by planes of growth (111, 100) on various substrates. The temperature dependences of a Hall coefficient Rí of the Pb_1-xSn_xSe doped by indium (0,3–0.5 mass. %) with different concentration of the charge carries were investigated. In is shown that mobility determined from Hall and electroconductivity measurements in the impurity conductivity region changes on degree-low m ~ T ^-n , where n = 1,6–2,5.