Original technique of the obtaining of epitaxial films of the A^IVB^VI type semiconductors and p-n-structures on their base in super high vacuum by the “hot wall” method have been developed. The conditions of the growth of epitaxial films of Pb_1-xSn_xTe (x = 0,2) PbTe_1-ySn_y (y = 0,08) in super high vacuum are defined and peculiarities of their growth on various substrates have been established. In the order of increasing of charge carrier mobility and improving structure perfection of the films additional compensating source of halogen vapors was used. Crystal structures of the obtained epitaxial films and p-n-structures have been investigated by electronographic, electronomicroscophic and X-ray diffractometric methods. Isoperiodical heterostructures of p-Pb_1-xSn_xTe (x = 0,2) — n-PbTe_1-ySn_y (y = 0,08) were obtained. On the base of heterostructures obtained photosensitive elements with parameters: R₀A_{77 K} = 0,6—0,8 cm²; l max = 10,5 mm were fabricated.