The different type design of sensitive elements for photoconducting (PC) and photoelectromagnetic (PEM) infrared detectors for attention have been offered. For uncoiled PC and PEM detectors on the base of HgCdTe by the sensing elements as meander-type have been considered. For PC IR-detectors the construction with two-side metallization of the contact areas of the element are represented. These detectors high sensitivity are demonstrated.