HALL EFFECT IN EPITAXIAL Hg0,8Cd0,2Te LAYERS
INTERPRETATION PECULIARITY

K.O.Boltar
The State Unitary Enterprise «RD&P Center "Orion"», Moscow, Russia

          The influence of thin inversion surfase layer in p-type Hg0,8Cd0,2Te epitaxial structure on magnetic field Hall coefficients dependence have been investigated. The method of carriers concentration and mobility in epitaxial layer determination including the presence of thin inversion surface layer on it surface is discussed.

Contens of the "Applied Physics" journal, 1999, N 6