HIGH-FREQUENCY SI-PHOTODIODES FOR INFRARED DETECTION
IN 0,6-1,1 mkm SPECTRAL BAND

YU.M.Djogot, O.N.Zabenkin, T.M.Melnikova, A.V.Kulymanov, N.V.Kravchenko, O.V.Ogneva

State Unitary Enterprise "RD&P Center "Orion", Moscow, Russia

The specialties and basic photoelectric characteristics are considered of the pin-photodiodes technolodgy intended for quantitative production. The single- and multielement devices for 0,8-0,9 mkm-band detection and for 1,06 mkm-laser's pulse detection, as while. The diameter of the devices sensitive area is restricted to 0,2-16 mm range. The perspectives are discussed of producing both single-element and 8-9-elements linear array detectors for use in wide spectral band of 0,6-1,1 mkm with avalanche factors of 10-100.

Contens of the "Applied Physics" journal, 1999, N 6