Details of silicon pin-photodiodes operation in high pulse illumination range for faint radiation absorbtion in the material are considered. The equation in time-lag-free approximation for pulse photocurrent-radiant flux, characteristics of photodiode, depending on it's electrophysical parameters and operating condition is deduced. Approximate calculated evaluation of higher limit of a linear range of photodiode operation of given. The calculated data are compared with those ones found by at experiment at l = 1,06 mm.

Contens of the "Applied Physics" journal, 1999, N 6