Designed technology and fabricated IR focal plane arrays for spectral ranges 3—5 and 8—12 mm based on heterostructures Hg_1-xCd_xTe/GaAs and quantum well infrared photodetectors GaAs/AlGaAs, growing by molecular-beam epitaxy. The photosensitive of Hg_1-xCd_xTe and CdZnTe buffer layers were grown on GaAs substrate. For the purpose to reduce an influence of surface on recombination processes gradedgap Hg_1-xCd_xTe layers with the increased composition to surfaces were grown. Designed and fabricated silicon multiplexes operating with the frame rate up to 50 Hz. For the fabrication of photosensitive module was used method of group cool welding through indium bumps. Noise Equivalent Temperature Differences (NETD) of module with dimensionality 128x128 at the operating temperature 78 K were 0,02 and 0,032 K for the cutoff wavelength 8 and 8,7 mm, accordingly. Multiple quantum well structures were grown using molecular beam epitaxy. It is shown that developed technology allows to get a QWIP arrays 128x128 (l_max ~ 8 mm) with NETD = 0,021 and 0,067 K at operating temperature 54 and 63 K, accordingly.