Designing and growth of photosensitive structures on basis of MCT MBE for infrared devices

Yu. G. Sidorov, S. A. Dvoretsky, N. N. Mikailov, M. V. Yakushev, V. S. Varavin, V. V. Vasiliev, A. O. Suslyakov, V. N. Ovsyuk
Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia

There has been developed and produced the molecular beam epitaxy (MBE) machine with integrated analytical equipment control for growth of A2B6 included mercury contained compounds. The technology of mercury cadmium telluride (MCT) heteroe-pitaxial structures (HS) growth by MBE with given composition distribution throughout the thickness has been developed. HS’s MCT MBE on CdZnTe/GaAs were constructed and growing with varigap layers on interfaces of MCT film. These HS MCT MBE were used for fabricating high quality single and multi-elements photoresistors and photodiodes operated in wavelength range 3—5 and 8—12 mm and up to 20 mm and over at 77 K and 200-250 K. The widegap layers at interfaces of MCT film was used as a passivant. The narrowgap layer at interface of MCT film — buffer layer was used for decreasing of serial resistance of diodes. The HS’s MCT MBE with special composition distribution throughout the thickness were used for decreasing of dark current of diodes operated at near 200 K.

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