Electron microscopy and electron-probe methods have been used to study the topology of near-surface macroscopic defects in Cd_xHg_1-xTe (x ~ 0,2) crystals. The formation of inclusion saturated with mercury or tellurium was observed in the region of the macroscopic defects. The analysis of the generation-recombination activity of both wide and narrow band gap inclusions in CdHgTe matrix has been carried out. Temperature dependencies of life time t and spectral characteristics of photoconductivity for Cd_xHg_1-xTe crystals (x = 0,2) with photoactive inclusions were investigated. It was shown, that in N-type character of effective life time temperature dependencies in nonhomogeneous crystals, is determined by the interband impact mechanism of recombination with changing effective geometrical sizes of recombination active regions under temperature increase.