Ion implantation induced defect profiles in Hg_1-xCd_xTe (MCT) are observed for wide range ion current density (10^-6–10 A/cm₂). Distribution of implanted ions and different radiation damages were investigated theoretically and experimentally. Profiles of vacancy type, electrical active defects and extended damages in as-implanted MCT exceed the average projective ranges of implanted ions (R_p). At the same time it is not coincidence for different type defect profiles. Differences in damage profiles for low and high current density implantation are examined. We suppose some processes resulting in such defect distribution.