Boroshnev A.V., Kovtonyuk N.F. Spatial-light modulators on the base of metal-
dielectric-semiconductor-liquid crystal strictures.
| 5 |
Kerget I.V., Korneychik V.L., Kudryashov A.A. Infrared dual magnification telescope
using diffractive optics.
| 11 |
Soltanovich O.A., Yakimov E.B., Yarykin N.A. Metastable behavior of current-voltage
characteristics of p-n junctions formed on CdHgTe.
| 14 |
Matiouchenko V.G., Strakhov V.V., Zhirkov A.O. Geometric calibration television
measuring systems with solid-state photo detectors.
| 19 |
Gromov E.A., Yermakov V.M., Gavrin Ye.A., Kochurin A.V. Some development
problems of the bottle-type, quick-acting cryogenic systems.
| 25 |
Afanasjev A.V., Odnosevteev V.A., Orlov I.J. Multiple-channel IR acquisition and
communication system.
| 29 |
Kokhanenko A.P., Korotaev A.G., Voitsekhovskii A.V. Radiation defect profiles in MCT
for various ion implantation conditions.
| 38 |
Kokhanenko A.P., Korotaev A.G., Voitsekhovskii A.V. Formation of boron heavily
doped nanolayer in silicon by powerful ion irradiation.
| 45 |
Voitsekhovskii A.V., Nesmelov S.N., Kulchinskii N.A. Photoelectric characteristics of
inhomogeneous MIS-structures in base of Si, HgCdTe.
| 50 |
Abdinov A.Sh., Jafarov M.A., Babayeva R.F., Nasirov E.F., Mamedov H.M.
Photoconductivity of Cd1-xZnxSe films, deposited from solution.
| 56 |
Abdinov A.Sh., Jafarov M.A., Mechtiyev N.M., Nasirov E.F., Mamedov H.M.
Photodetectors of IR radiation on the base CdS1-xSex films, deposited from
solution.
| 63 |
Jafarov M.A. Photoreceivers of IR radiation on the basis of CdSe:Cu films, deposited
from solution.
| 68 |
Gasanov I.S. Source of intense beam of ions low
energy.
| 73 |
Tagiyev M.M. High-temperature magnetothermoelectrical extruded material on the basis
of Bi85Sb15 solid solution.
| 77 |
Djafarov M.A., Aliyeva T.D., Abdinov D.Sh. Thermoelectric efficiency of the extruded
samples of Bi0,5Sb1,5Te3 and
Bi2Te2,7Se0,3 solid solutions with different
grain size.
| 82 |
Bagieyva G.Z., Mustafayev N.B., Abdinov D.Sh. Surfase conductivity and bulk
themoelectric properties of themoelements on the basis ofextruded samples of
Bi0,5Sb1,5Te3 and Bi2Te2,7Se0,3
solid solutions.
| 86 |
Salaev E.Yu., Nuriev H.R., Jalilova Kh.D., Faradjev N.V. Optical
properties of Pb1-xSnxSe epitaxial films.
| 91 |
Demyanenko M.A., Marchishin I.V., Klimenko A.G., Kozlov A.I.,
Ovsyuk V.N., Savchenko A.P., Toporov A.I., Shashin V.V. Focal plane infrared
photodetectors array on MQW GaAs/AlGaAs.
| 94 |
Slobodchikov S.V., Salikhow Kh.M., Russu E.V. The semiconductor
photodetectors with palladium contact as detectors of the hydrogen and
hydrogen-containing gases.
| 100 |
Blank T.V., Goldberg Yu.A., Konstantinov O.V., Obolensky O.I.,
Posse O.A. Temperature stabilityof the m-s and p-n photodetectors based on
GaAs, GaP, Si.
| 106 |
Kharitonov A.S. Search of steady development regularities of
composite systems.
| 113 |