ContentsPhotoelectric characteristics of inhomogeneties MIS-structures in base of Si, HgCdTe
A. V. Voitsekhovskii, S. N. Nesmelov, N. A. Kulchitskii
Siberian Physico-Technical Institute, Tomsk, Russia
In this work the influence of inhomogeneous distribution of resistance of semiconductor’s boundary layer and surface potential on integral and local photoelectric properties of MIS-photodetectors is considered.
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