V.P. Reva, F.F. Sizov

Institute for Semiconductor Physics of the Ukraine NAS,
Kiev, Ukraine

   Silicon technologies of manufacturing readout devices of multielement linear and array photodiode structures are principle today at designing and producing hybrid PDA of IR range. Usually such readout devices include IR photodiode conjugated circuits, premultiplexer processing circuits (storage, division, skimming, antiblooming multiplexing circuits, amplifying circuits).
   Circuits conjugating four well-known typesare used depending on the spectral range of PDA using, Interdependences of photodiode output parameters (D*, NETD) and conjugated circuits are discussed Requirements for technological parameters of readout devices are also discussed. Use of premultiplexer processing of electrical signals from photodiodes allows to expand a dynamic range of PDA but brings to degradation of their parameters. Operating characterics of some readout devices in different modes - division, skimming, skimming + division are given. NETD evaluations in these modes are given.
   CCD registers which are usually used as multiplexers in PDA with photodiodes linear arrays are discussed. Temperature dependences of trasfer efficiency for different types of CCD (with surface and bulk channel, four-and two-phase ones) produced according to different technologies are discussed.
   Comparative characterics of PDA having readout circuits both with the use of CMOS and CCD technologies are cosidered.

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