Astakhov V.P., Bolesov I.A., Gindin D.A., Karpov V.V., Sorokin K.V. About influence of
surface and contact effects on volt-ampear characteristics photodiodes on n-type silicon
| 48 |
Astakhov V.P., Gindin D.A., Karpov V.V., Talimov A.V. Rise of thermal stability of the InSb
photodiodes
| 56 |
Bakumenko V.L., Sviridov A.N., Taubkin I.I. The analysis of ultimate abilities of ideal thermal
imagers at observation of "point" emitters
| 63 |
Orlov S.V., Vinetsky Yu.R. Software for simulation of image conversion in IR TDI systems
and optimizing TDI focal plane arrays
| 71 |
Reva V.P., Sizov F.F. Problems of designing and producing readout circuits for IR-
photodiodes
| 82 |
Goreva N.Z., Koschavtsev N.F., Leleikin V.I., Fedotova S.F. The device for control of thermal
fields with temperature measurement
| 100 |
Borisov V.K., Demidov S.S., Kuznetsov P.A., Klimanov E.A., Lebedev V.V., Saginov L.D.,
Khromov S.S., Cshukin S.V. Development of the high-frequency differential amplifier for
application in photoreceiving devices on the basis of silicon pin-photodiodes
| 103 |
Borisov V.K., Burlakov I.D., Zaslavsky A.V., Demidov S.S., Kuznetsov P.A., Klimanov E.A.,
Khomjakov L.P., Khromov S.S. Low-noise differential amplifier for local-plane CdHgTe
photoresistor array
| 105 |
Efimova Z.N., Zaslavsky A.V., Kuznetsov P.A., Popov E.A., Klimanov E.A., Timofeev A.A.,
Khomjakov L.P. A series of the low-noise hybrid IC for multichannel photoreceiving devices
on the basis of the CdHgTe photoresistors
| 107 |
Sokolovsky B.S., Pysarevsky V.K. Analytical calculation of dark voltage-current
characteristics of double layer heterojunction photodiode
| 111 |
Astakhov V.P., Tulovchikov V.S., Perevoschikov V.A., Zharkov E.S.,
Rezvov A.V., Murel A.V.
Material-science features of creation of ion-planar structures on InSb monocrystals
| 118 |