V.P.Astakhov, D.A.Gindin, V.V.Karpov, A.V.Talimov.

Joint Stock Company "Moscow Plant "Sapphire", Moscow, Russia

   The capsules of planar photosensitive elements on InSb have been fabricated. The modes of implantation and annealing, the conditions of anodic oxide film creation ( changed electrolyte ) in a current-state mode, which corresponds to basic technology, were altered.The volt-ampear characteristics (VAC) of such capsules and its thermal stability have been investigated. This VAC were compared with VAC of capsules, that were fabricated in base technology modes.
   It was shown, that the drop-voltage of experimental capsules less on 20-25% relatively that of serial capsules. But the experimental capsules thermal stability more that of the serial capsules (the temperature after that the drop was obtained, equaled 180°C for experimental capsules and 145°C - for serial capsules). The effect of electric training that increase the drop voltage on 1V, was observed for all capsules that were investigated.
   The influence of additional (second) stage of anodic oxidation with lower currents to anodic oxide film properties have been studied. It was shown, that such stage raised drop- voltage of film and its uniformity within the samples. The necessity of such film application will determined after capsules fabrication on the base of this anodic oxide film and their VAC investigations.

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