V.P.Astakhov, I.A.Bolesov, D.A.Gindin, V.V.Karpov, K.V.Sorokin.

Joint Stock Company "Moscow Plant "Sapphire"

   At manufactoring of two-ground photodiodes on n-type silicon, function in photovoltaic regime at contrary-parallel insertion, the main task is identical straight branches of volt-ampear characteristics for both crystals of photodiodes. Among factors, which may influence on the straight branch bear in mind space and contact phenomenon.In this work it is studied an influence to photodiodes parameters of such ways as ring additional short circuit p-n junction, p-n junction periphery irradiation with ions N₂⁺. Besides that it is studied an influence of tension on field electrode to VAC.For concrete conditions it is shown, that decisive influence to forward VAC render the contact Al-Si. Improvement action to it render application ring additional Decisive influence to forward VAC render the tension of field electrode. At negative tension on it the reverse level may be falled in 35 time.

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