DEFECTS AND IMPURITIES IN MCT EPITAXIAL LAYERS GROWN BY
METALORGANIC CHEMICAL VAROP DEPOSITION

S. N. Ershow, T. I. Benushis
Nizhny Novgorod State University, Russia

L. A. Bovina, Y. I. Stafeew
The State Unitary Enterprise «RD&P Center "Orion"», Moscow, Russia

          Different defect types in MCT epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The possibility to control defects concentration and semiconductor conductivity type by the variation of metalorganic components composition and gas- carrier pressure has been shown. The Hg inclusion and Hg leakage from the layer surface are main reasons of temporary instability. CdTe surface passivation eliminates Hg leakage. Further annealing results to inclusion resorption. This provides MCT epitaxial layers stability.

Contens of the "Applied Physics" journal, 2000, N 1