ContentsFocal plane infrared photodetector array based on MQW GaAs/AlGaAs
M. A. Demyanenko, I. V. Marchishin, A. G. Klimenko,
A. I. Kozlov, V. N. Ovsyuk, A. P. Savchenko, A. I. Toropov, V. V. Shashkin
Institute Semiconductor Physics, Novosibirsk, Russia
Results of the development 128x128 pixels long IR region photodetector array are produced. The fabrication involves hybridizig GaAs/AlGaAs MQW chips to CМOS readout chips. Temperature resolution NETD — 0,067 K at operating temperature 65 K.
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