Problems of designing and producing readout circuits
for IR-photodiodes
V.P. Reva, F.F. Sizov
Institute for Semiconductor Physics of the Ukraine NAS,
Kiev, Ukraine
Silicon technologies of manufacturing readout devices of multielement
linear and array photodiode structures are principle today at designing and
producing hybrid PDA of IR range. Usually such readout devices include IR
photodiode conjugated circuits, premultiplexer processing circuits
(storage, division, skimming, antiblooming multiplexing circuits,
amplifying circuits).
Circuits conjugating four well-known typesare used depending on the
spectral range of PDA using, Interdependences of photodiode output
parameters (D*, NETD) and conjugated circuits are discussed Requirements for
technological parameters of readout devices are also discussed. Use of
premultiplexer processing of electrical signals from photodiodes allows to expand
a dynamic range of PDA but brings to degradation of their parameters. Operating
characterics of some readout devices in different modes - division, skimming,
skimming + division are given. NETD evaluations in these modes are given.
CCD registers which are usually used as multiplexers in PDA with photodiodes
linear arrays are discussed. Temperature dependences of trasfer efficiency for
different types of CCD (with surface and bulk channel, four-and two-phase ones)
produced according to different technologies are discussed.
Comparative characterics of PDA having readout circuits both
with the use of CMOS and CCD technologies are cosidered.