| Pokhmelnykh L.A. Analytical expression for calculation of ionization potentials of the periodic system elements | 5 |
| Pokhmelnykh L.A. Electrostatics and gravitation as different manifestations of stable elemental particles general interaction | 24 |
Physical installations and instrumentation
| Shalnov M.P., Shuvalov V.A., Yakovlev A.A. Optimization of the electromagnetic device parameters | 32 |
| Antropov N.N., Diakonov G.A., Pokryshkin A.I., Popov G.A., Kazeev M.N., Khodnenko V.P. Pulsed plasma thrusters for spacecraft attitude and orbit control system | 37 |
Photoelectronics
| Astakhov V.P., Bolesov I.A., Gindin D.A., Karpov V.V., Sorokin K.V. About influence of surface and contact effects on volt-ampear characteristics photodiodes on n-type silicon | 48 |
| Astakhov V.P., Gindin D.A., Karpov V.V., Talimov A.V. Rise of thermal stability of the InSb photodiodes | 56 |
| Bakumenko V.L., Sviridov A.N., Taubkin I.I. The analysis of ultimate abilities of ideal thermal imagers at observation of "point" emitters | 63 |
| Orlov S.V., Vinetsky Yu.R. Software for simulation of image conversion in IR TDI systems and optimizing TDI focal plane arrays | 71 |
| Reva V.P., Sizov F.F. Problems of designing and producing readout circuits for IR- photodiodes | 82 |
| Goreva N.Z., Koschavtsev N.F., Leleikin V.I., Fedotova S.F. The device for control of thermal fields with temperature measurement | 100 |
| Borisov V.K., Demidov S.S., Kuznetsov P.A., Klimanov E.A., Lebedev V.V., Saginov L.D., Khromov S.S., Cshukin S.V. Development of the high-frequency differential amplifier for application in photoreceiving devices on the basis of silicon pin-photodiodes | 103 |
| Borisov V.K., Burlakov I.D., Zaslavsky A.V., Demidov S.S., Kuznetsov P.A., Klimanov E.A., Khomjakov L.P., Khromov S.S. Low-noise differential amplifier for local-plane CdHgTe photoresistor array | 105 |
| Efimova Z.N., Zaslavsky A.V., Kuznetsov P.A., Popov E.A., Klimanov E.A., Timofeev A.A., Khomjakov L.P. A series of the low-noise hybrid IC for multichannel photoreceiving devices on the basis of the CdHgTe photoresistors | 107 |
| Sokolovsky B.S., Pysarevsky V.K. Analytical calculation of dark voltage-current characteristics of double layer heterojunction photodiode | 111 |
| Astakhov V.P., Tulovchikov V.S., Perevoschikov V.A., Zharkov E.S., Rezvov A.V., Murel A.V. Material-science features of creation of ion-planar structures on InSb monocrystals | 118 |
Measuring and detecting technique
| Matvienko G.G., Ptashnik I.V., Romanovsky O.A., Kharchenko O.V., Shamanaev V.S. Applicability of the DF-laser for detection of aerosolic-and-gaseous ejections | 129 |
| Stevich Z., Raichich-Vuyasinovich M., Stankovich Z.D. The device for measuring the critical temperature of high-temperature superconductors | 137 |
| Lotoshnikov U.M., Juravleva U.N. The flying tests of rockets and aircraft spectroenergetic infra-red radiation characteristics | 142 |
Contents of
the journal down to 1997