Joint Stock Company "Moscow Plant "Sapphire", Moscow, Russia

V.S. Tulovchikov, V.A. Perevoschikov, E.S. Zharkov, A.V. Rezvov

Nishnii Novgorod State University

A.I. Murel

Institute of fisik for microstructures RAN, Moscow, Russia

   The results of investigation of monocrystalline InSb physical properties are presented for various levels of radiative and thermal actions. Also data for planar device structures produced by implantation of the ions Mg⁺, Be⁺ with use of intrinsic anodic oxides and SiO₂ based films are included.
   In the given work, the conditions of doping InSb by ions Mg⁺, Be⁺ ensuring high electrical activityof acceptons and low level of radiation damages at loww annealing (T_ann) temperature are considered. Thus, the specificity of properties of real crystals, background history of surface processing and level of their structures perfection were taken into account. It is established that the most perfect crystals are characterized by highest swellig, causing deterioration of material structure within the ion ranges.
   The analysis of experience of multielement structure manufacturing on InSb has shown the dramatic character of usually used technological receptions from the point of view of structural opportunities of monocrystal. The results of work allow proving a number of the new approaches in prodution of ion-planar matrix IR-detectors on narroww-band semiconductors.

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