B.S. Sokolovsky, V.K. Pysarevsky

Institute Applied Physics, Franko National University,
Lviv, Ukraine

   An analytical expression for dark voltage-current characteristics of double layer heterojunction photodiode. It is shown that spatial inhomogeneity of energy band gap in photodiode base region allows to substantially increase the reverse current connect with thermal generation of carries both in the base region and at the contacts. In the case when wide gap layer is remote from metallurgical edge of p-n-juction at the distance comparable with the thickness of the space charge region a portion of negative differential resistance may appear on the reverse branch of voltage-current characteristic.

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