Yu.A. Abuamian, V.I. Serago

Institute of Radiophysics and Electronics of Armenian Academy of Science, Erevan, Armenian

V.I. Stafeev

State Unitary Enterprise "RD&P Centre "Orion", Moscow, Russia

   Photosensitivity of Pb-Sn-Te p-n junction FET with isolated grid has been analyzed. Photosensitivity is proportional to square root of grid bias voltage and inversely proportional to of IR radiation incident to p-n junction.

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