A. V. Filatov, V. I. Looksha, G. E. Popovyan, U. S. Troshkin, U. P. Sharonov
ORION Research-and-Production Association, Moscow, Russia

The influence of the ion etching was investigated at temperature of liquid nirogen on effective time of life of the ion carriers of a charge in thick (~ 1 mm) and thin (~ 0.01 mm) samples CdHgTe n-type conductivity. Is received, that use of the ion etching at cryogenic temperatures allows to lower re-combination speed on lateral sides of photoresistors and at the expense of it to increase volt sensi-tivity of classical photoresistors and time of accumulation of a signal in SPRITE receivers. The pa-rameters of photodetectors are given.

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