Filachev A. M.
XVII International scientific and engineering conference on photoelectronics and night vision devices
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Perevodchikov V. I.
Hundred years from the birthday of P. V. Timofeev
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Ponomarenko V. P., Filachev A. M.
Photoelectronics for new generation of electron-optical equipment
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Varavin V. S., Gutakovsky A. K., Dvoretsky S. A.,
Kartashev V. A., Latyshev A. V., Mikhailov N. N., Pridachin D. N., Remestnik V. G., Rukhlitsky S. V., Sabinina I. V.,
Sidorov Yu. G., Titov V. P., Shvetz V. A., Yakushev M. V., Aseev A. L.
The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy
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Arutyunov V. A., Vasil’ev I. S., Ivanov V. G., Prokof’ev A. E.
State and perspectives of develop-ments of chilled IR focal plane arrays for a dual purpose at the Electron Central Research Institute
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Filachev A. M., Ponomarenko V. P., Taubkin I. I., Burlakov I. D., Boltar K. O.,
Gorelik L. I., Kravtchenko N. V., Kulymanov A. V.,
Kulikov K. M., Lozhnikov V. E., Sharonov Yu. P.
Photodetectors and photodetective assemblies for 0.3-11-µm spectral range
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Gorbachenya N. K., Zotikov A. F., Novichenkov V. Yu.
Orientantion of photodetectors on op-toelectronic information test system for night vision
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Voitsekhovskii A. V., Kokhanenko A. P., Nesmelov S. N., Lyapunov S. I., Komarov N. V.,
Niciphorov A. Yu. Threshold Characteristics of IR-photodetectors on
base of PtSi-p-Si Schottky barriers with sur-face highly-doped layer
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Salayev E. Yu., Abdinov D. Sh., Askerov K .A. Influence of the ionizing irradiation on the basic characteristics of cooled
photoresistors on the CdxHg1-xTe basis
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Arakelov G. A.
State of works and development prospects of thermoelectric cooling for photoe-lectric semiconductor detectors
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Alieva T. D., Akhundova N. M., Abdinov D. Sh.
Three-stage thermoelecrtical module for ~200 K temperature level
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Agayev Z. F., Allahverdiyev E. A., Murtuzov G. M., Abdinov D. Sh.
Material on the basis of PbTe for p-branches of thermoelectric coolers
| 87 |
Borisova I. V., Gorenok V. N.,
Image merging device
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Huserynov E. K., Salmanov V. M.
Infrared photoreceiver on the basiс of the structure with quan-tum wires
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Ivanov V. P, Lukin A. V., Melnikov A. N.
Laser-holographic measuring complex
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Rizhkov V. N., Ibragimova M. I., Aleeva N. V., Chaschin S. P.,
Nesmelova I. M., Andreev V. A.
Photodiode structures on the manganese—mercury—tellurium basis
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Mikhalev A. S., Mikhalevsky M. V.
About possibility of using universal controller for electrome-chanical executive subsystems of robotics in the manufacture of photoelectro-
nics product
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Stefanov V. A., Kravchenko V. S.
Simulators of dynamic thermal fields for bench tests of IR im-ager systems
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Filatov A. V., Looksha V. I., Popovyan G. E., Troshkin U. S.,
Sharonov U. P.
The influence of the ion etching on parameters of the CdHgTe photoconductors
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