Applied physics
No. 6, 2002

The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy

V. S. Varavin, A. K. Gutakovsky, S. A. Dvoretsky, V. A. Kartashev, A. V. Latyshev, N. N. Mikhailov, D. N. Pridachin, V. G. Remestnik, S. V. Rukhlitsky, I. V. Sabinina, Yu. G. Si-dorov, V. P. Titov, V. A. Shvetz, M. V. Yakushev, A. L. Aseev

Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia

Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT het-eroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si-substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.

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