Applied physics
No. 6, 2002

Threshold characteristics of IR-photodetectors on base of PtSi-p-Si Schottky barriers with surface highly-doped layer

A. V. Voitsekhovskii, A. P. Kokhanenko, S. N. Nesmelov
The Siberian Physical-and-Technical Institute at the Tomsk State University, Tomsk, Russia


S. I. Lyapunov, N. V. Komarov, A. Yu. Niciphorov
The Matrix Technology R&P Enterprise, Moscow, Russia

Surveyed are opportunities for increasing the threshold performances of detectors, which are based on Schottky barriers such as PtSi-Si, by means of making a surface high alloy layer in the silicon, with the layer being created by a short-pulsing implantation of the boron on the method of recoil nuclei. The parameters of layers and operation temperatures, optimum for usage of detectors in an 2- to 5-mm spectral range, are spotted.

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