A. M. Filachev, V. P. Ponomarenko, I. I. Taubkin, I. D. Burlakov, K. O. Boltar, L. I. Gore-lik, N. V. Kravtchenko, A. V. Kulymanov, K. M. Kulikov, V. E. Lozhnikov, Yu. P. Sharonov

State Unitary Enterprise «RD&P Center "Orion"», Moscow, Russia

Main photoelectric characteristics of high-speed photoelectric semiconductor detectors (PESD) and pho-todetective assemblies (PDA) based on GaP, Si, Ge, InGaAsP/InP photodiodes as well as CdHgTe photodi-odes and photoresistors for 0.3—11 µm spectral range are given. It is noted that the main photoelectric char-acteristics correspond to the up-to-date level of foreign analogs. Results of investigation of PESD and PDA based on CdHgTe photodiodes in a frequency band of up to 1000 MHz at a cooling temperature of from 80 K are given. It is shown that for frequencies of up to 40 MHz photodiodes and photoresistors have close threshold characteristics. Values of heterodyne threshold for CdHgTe photoresistors at operating tempera-tures of 200 and 300 K are given. Main characteristics of a speed thermal cooling PESD based on CdHgTe photoresistor offered for indication of laser radiation in 0.8— 11 µm spectral range are given.

Contents