Тhе feature of donor centers distribution in p-type CdxHg1-xTe crystals after low-temperature ion implantation
V. N. Ovsyuk, N. Kh. Talipov
Institute of Semiconductor Physics, Novosibirsk, Russia
The formation of n+/n-/p-structure in the low-temperature (80 К) implanted p-type CdxHg1-xTe(MCT) crystals was investigated. Differential Hall effect measurements at 77 K was used for investigation of donor centers distribution. The suppression of n+/n-/p-structure formation during high dose low-temperature boron ion implantation in p-type MCT has been observed for the first time. It is concluded about partly annealing of radiation defects in the crystal and electrical activation of boron atoms during ion implantation at room temperature.
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